CSD13383F4 12-V N-Channel FemtoFET MOSFET

CSD13383F4 12-V N-Channel FemtoFET MOSFET
Description

This 37 m, 12 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching Applications
• Single-Cell Battery Applications
• Handheld and Mobile Applications

Source Texas Instruments

CSD13383F4 12-V N-Channel FemtoFET MOSFET

APR343 new MOFSET from DIODES

APR343 is a secondary side MOSFET driver for synchronous rectification in DCM operation, which integrates the output voltage detection function for primary side control system.
The synchronous rectification can effectively reduce the secondary side rectifier power dissipation and provide high performance solution. By sensing MOSFET drain-to-source voltage, APR343 can output ideal drive signal with less external components. It can provide high performance solution for 5V output voltage application.

Same as AP4341, APR343 detects the output voltage and provides a VCC periodical signal when the output voltage is lower than a certain
threshold. By fast response to secondary side voltage, APR343 can
effectively improve the transient performance of primary side control
system.

The APR343 is available in SOT25 package.

APR343 MOFSET from DIODES
APR343 datasheet

new MOSFET SCT20N120 from STMicroelectronics

The new SCT20N120 silicon-carbide power MOSFET from STMicroelectronics brings advanced efficiency and reliability to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment.
ST is among the few vendors leading the development of the robust and efficient silicon-carbide power semiconductors. The 1200V SCT20N120 extends the family, with on-resistance (RDS(ON)) better than 290mΩ all the way to the 200°C maximum operating junction temperature. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.
SCT20N120 MOFSET
SCT20N120 MOFSET datasheet datasheet

New Power MOSFET Drivers MCP14A005X and MCP14A015X From Microchip

New Power MOSFET Drivers From Microchip Feature Thermally
Efficient, Small Packages For Improved Efficiency
MCP14A005X and MCP14A015X Allow Fast Transitions of Large Capacitive Loads
With Minimal Space Requirements

Microchip Technology Inc., a leading provider of microcontroller, mixed-signal, analog and Flash-IP solutions, today announced the first power MOSFET
drivers in a new product family—the MCP14A005X and MCP14A015X. These drivers feature an entirely new driver architecture for high speed operation,
the first in the MCP14A product line. Available in SOT-23 and 2 x 2 mm DFN packages, the new devices are among the smallest packaged MOSFET drivers on
the market today. The small packaging enables higher power densities and smaller solutions, while the design targets fast transitions and short delay
times that allow for responsive circuit operation. Additionally, these MOSFET drivers include low input threshold voltages that are compatible with
low voltage MCUs and controllers, while still maintaining strong noise immunity and hysteresis.

New Power MOSFET Drivers
MCP14A015X 1.5A MOSFET Driver
with Low Threshold Input And Enable datasheet
datasheet

TI’s NexFET™ N-channel power MOSFETs achieve industry’s lowest resistance

Texas Instruments’s NexFET™ N-channel power MOSFETs achieve industry’s lowest resistance
Lowest Rdson 25-V and 30-V devices in 5 mm by 6 mm QFN package

NexFET Power MOSFETs – Guide
Guide
TI's NexFET™ N-channel power MOSFETs

New NexFET products and key features

Part Number

Application

Vds/Vgs

Package (mm)

Rdson max (mohm)

Qg (4.5) (nC)

4.5V

10V

CSD16570Q5B

ORing/Hot Swap

25/20

QFN 5×6 (Q5B)

0.82

0.59

95

CSD17570Q5B

30/20

0.92

0.69

93

CSD17573Q5B

Low Side Buck/
ORing/Hot Swap

30/20

QFN 5×6 (Q5B)

1.45

1.0

49

CSD17575Q3

Low Side Buck

30/20

QFN 3.3×3.3 (Q3)

3.2

2.3

23

CSD17576Q5B

QFN 5×6 (Q5B)

2.9

2.0

25

CSD17577Q5A

High Side Buck

30/20

QFN 5×6 (Q5A)

5.8

4.2

13

CSD17577Q3A

QFN 3.3×3.3 (Q3A)

6.4

4.8

13

CSD17578Q3A

9.4

7.3

7.9

CSD17579Q3A

14.2

10.2

5.3

CSD85301Q2

Dual Independent FET

20/10

QFN 2×2 (Q2)

27

N/A

4.2

CSD13383F4

Load Switch

12/10

FemtoFET 0.6×1.0 (0402)

44

N/A

2.0

SOURCE Texas Instruments