Advanced Automotive EEPROM

Advanced Automotive EEPROM
STMicroelectronics Unveils New Automotive Serial EEPROMs Offering Industry’s Best Choice of Densities in Tiny 2x3mm Outline

Automotive-qualified serial EEPROMs from STMicroelectronics provide the industry’s largest selection of densities in the tiny 2mm x 3mm WFDFPN8 package, giving engineers maximum flexibility when designing highly integrated body controllers and gateways, as well as radar and camera modules for Advanced Driver Assistance Systems (ADAS).
Using a discrete serial EEPROM for data and parameter storage can help simplify design while offering maximum upgrade flexibility. Limited memory package and density options have prevented taking full advantage of this approach in the most space-constrained applications, but ST is now offering its new automotive-qualified WFDFPN8 package at all densities from 2KB to 512KB. In addition, both I2C and SPI serial interfaces are supported.

The WFDFPN8 outline has already proved popular in consumer-electronics applications, and ST has now created a rugged version capable of withstanding automotive environments. The devices have passed AEC-Q100 grade 0 reliability criteria tests and operate up to 125°C. Further advantages include 4ms write time allowing fast parameter storage; clock frequency up to 20MHz allowing rapid data exchanges; and built-in traceability and security features. These include a dedicated page for software identification and a write-lockable page to keep sensitive data secure.

M95512-A125 Automotive 512-Kbit serial SPI bus EEPROMs with high-speed clock Datasheet and ordering information

Samsung’s new 3D V-NAND Memory

3D V-NAND Memory
Current and Future Data Demands

Worldwide data transferal continues to grow at an explosive rate. The amount of data being shared by average users on a daily basis is at an all-time high:

Facebook : 250 billion photos uploaded per day
Twitter : 100,000 new tweets per minute
YouTube : 30 hours of video uploaded per minute
flickr : 3,000 photos uploaded per minute
foursquare : over 2,000 check-ins per minute

Even semiconductor and memory chip development add to this increase in data sharing. Currently, these fields account for the transferal of approximately 4 Exabytes of data per month. However, that number is projected to increase to 10 Exabytes per month in 2016. Improvements must be made to existing memory to rise to the challenge of such rapid data growth.

Benefits of Samsung V-NAND over 2D Planar NAND

More capacity
More speed
More endurance
More power efficiency

Samsung’s new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including solid state drives (SSDs). Consumers can expect their handheld computers to perform better for longer periods of time between charges. Datacenter managers can expect increased productivity and longevity while saving on their power bill.

Samsung Electronics Mass Producing High-Density ePoP Memory for Smartphones

Samsung started producing the industry’s first ePoP (embedded package on package) memory – a single memory package consisting of 3GB LPDDR3* DRAM, 32GB eMMC (embedded multi-media card) and a controller. For use in high-end smartphones, the extremely thin ePoP combines all essential memory components into a single package that can be stacked directly on top of the mobile processor, without taking any additional space – a distinct improvement over existing two-package eMCP memory solutions.

“By offering our new high-density ePoP memory for flagship smartphones, Samsung expects to provide its customers with significant design benefits, while enabling faster and longer operation of multi-tasking features,” Jeeho Baek, Senior Vice President of Memory Marketing at Samsung Electronics. “We plan to expand our line-up of ePoP memory with packages involving enhancements in performance and density over the next few years, to further add to the growth of premium mobile market.”

The new ePoP provides an ideal “one-package” memory solution, satisfying the market needs for high speed, high energy efficiency and compactness. The 3GB LPDDR3 mobile DRAM inside the ePoP operates at an I/O data transfer rate of 1,866Mb/s, and sports a 64-bit I/O bandwidth.

Samsung ePoP Memory